Samsung Electronics has announced that it is now sampling 16Gb NAND flash memory manufactured on 50nm process technology. The first samples of will have a multi-level cell (MLC) design with a 4KB page size, with the company claiming that the jump to a 4KB page function improves the conventional 2KB paging system for MLC NAND flash to double the read speed, while increasing write performance 150%.
The company plans to begin mass-producing its 16Gb NAND flash memory in the first quarter of 2007. In September of 2006, Samsung also announced it has developed a 32Gb NAND flash device manufactured on 40nm node. The memory incorporated a charge trap flash (CTF) architecture, a new approach to further increase manufacturing efficiency while improving performance, according to the company.
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News source: DigiTimes
The company plans to begin mass-producing its 16Gb NAND flash memory in the first quarter of 2007. In September of 2006, Samsung also announced it has developed a 32Gb NAND flash device manufactured on 40nm node. The memory incorporated a charge trap flash (CTF) architecture, a new approach to further increase manufacturing efficiency while improving performance, according to the company.
View: The full story News source: DigiTimes
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