Breaking the speed barrier of traditional flash memory, Intel and Micron Thursday announced a new flash memory architecture that increases the data transfer rates in consumer electronics by cutting the bottlenecks affecting conventional NAND flash memory. IM Flash Technologies, a joint venture between Intel and Micron, has developed an 8Gb SLC (single-level cell) high-speed NAND chip which can reach read speeds up to 200MBps and write speeds of up to 100MBps, which could mean faster data transfer between devices like solid-state drives and video cards.
"With the popularity of digital video cameras and video-on-demand services, high speed NAND can enable a high-definition movie to be transferred five times faster than conventional NAND," said Kirstin Bordner, a spokeswoman for Micron.
View: The full story @ InfoWorld
"With the popularity of digital video cameras and video-on-demand services, high speed NAND can enable a high-definition movie to be transferred five times faster than conventional NAND," said Kirstin Bordner, a spokeswoman for Micron.
View: The full story @ InfoWorld
Commenting has either been disabled on this article or you are not logged in. Click here to login or register, its free!
Note: Anonymous commenting is disabled in order to keep the quality of responses to a high standard.