Samsung to introduce faster memory


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Samsung Semiconductor Inc., said Wednesday (August 14) that it is moving into mass production of 1-Gbit NAND-type flash memory, which will help lower the cost for memory used in consumer devices ranging from digital still cameras to MP3 players.

A write-cache function is included for continuous page programming, resulting in a 70% increase in speed from previous NAND flash memory devices, the company said. The read throughput is 16-Mbytes/s in by-8 mode and 27-Mbytes/s in the by-16 configuration. The cycle time is 50 nanoseconds at 1.8-volt operation.

Samsung and its rivals Toshiba and Hitachi are all gunning for the fast-growing serial flash segment, where demand from digital audio players and thumb-sized USB drives is helping to increase the market for such devices. Semico Research Corp. expects the flash memory market to hit $2-billion this year and register an annual growth rate of 80% by 2004.

Source: EE Times

http://www.eetimes.com/semi/news/OEG20020814S0013

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