SRAM
THE SEMICONDUCTOR DIVISION of Samsung Electronics claimed it has produced the world's smallest SRAM cell. The cell, produced on 90 nanometer DDR 3 technology is a 72 megabit device which has a cell size of .79µ2. Samsung said the device will be built into advanced servers and worksations. The cell, claims Samsung, has overcome the limits of lithography but uses the conventional KrF process. The device uses 1.2 volts and said mass production will start in the fourth quarter of this year. It will show off the device at the International Solid States Circuit Conference, which opens in San Fransisco on February 9th
View: Samsung SRAM Site
News source: the enquirer
DDR RAM
Seoul, Korea, Jan. 20 2003: Samsung Electronics Co., Ltd., the industry-leading memory technology supplier, today announced the industry's first 4 GigaByte (GByte) Double Data Rate (DDR) Dual In-line Memory Module (DIMM). The module encompasses thirty-six 1 Gigabit (Gb) DDR synchronous DRAM (SDRAM) components that achieve 4GByte density for high-performance applications such as servers, workstations and supercomputers.
"Samsung's advanced memory solutions are poised to enable an array of next-generation systems," said Jon Kang, Senior Vice President of Memory Product Planning and Engineering, Samsung Electronics. "Through close cooperation with top-tier manufacturers, Samsung's new high-density DDR solutions will expedite the availability of advanced computing systems."
News source: Samsung Electronics
-1 Comments - Add comment