AMD this week cocked a snoot at rival Intel's pursuit of high-k dielectric materials as the foundation for future, 45nm process technologies.
The chip maker's own solution is a three-gate transistor design, which it discussed at this year's IEEE International Electron Devices Meeting, held in Washington, DC. AMD also re-iterated its belief that silicon-on-insulator technology remains the best foundation for today's chips - and tomorrow's.
Central to the new design is the use of full-depleted SOI structures, AMD said. It detailed its work on FDSOI back in June, after announcing it was working on the technology earlier this year.
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News source: The Register UK
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