Samsung has announced a new technology called eXtended-Cube (X-Cube), a silicon-proven 3D integrated circuit (IC) packaging technology that enables 3D SRAM-logic silicon at 7-nanometres and beyond. For consumers, the technology will meet the demands of next-gen applications such as 5G, artificial intelligence, high-performance computing, and new mobile and wearable technologies.
Commenting on the product, Moonsoo Kang, senior vice president of Foundry Market Strategy at Samsung Electronics, said:
“Samsung’s new 3D integration technology ensures reliable TSV interconnections even at the cutting-edge EUV process nodes. We are committed to bringing more 3D IC innovation that can push the boundaries of semiconductors.”
One of the main benefits of the 3D design is that SRAM can be stacked on top of the logic die, ultimately freeing up space to include more memory in a smaller footprint. The smaller footprint also means signal paths are shorter which increases data transfer speed and energy efficiency.
The Korean firm says that it plans to work with global fabless customers to facilitate the deployment of its X-Cube 3D IC solutions to enable next-generation applications. It said that X-Cube is now available for advanced nodes including 7nm and 5nm. Further details about the technology will be shared at the annual conference, Hot Chips, which focuses on high-performance computing. The event will be live-streamed between August 16-18.