Leading DRAM chip designer and manufacturer SK hynix has announced today the next evolution of memory chip making using Extreme ultraviolet (EUV) equipment. Using this technology, the company will be able to mass-produce the latest fourth-generation of 10nm DRAM products which are more densely packed than last-gen process. The company calls the new node "1anm" that succeeds the 1znm launched back in 2019. The higher density of the 1a technology will also enable the company to extract 25% more chips from the same wafer size compared to 1z.
In terms of improvements, the new 1anm will allow LPDDR4 memory to reach speeds of 4266Mbps which has so far generally been associated with LPDDR4X chips. Alongside higher speed, the power consumption is also expected to fall by 20%. And when you add to these capabilities the property of being easily mass-producible, the new 1a process will prove useful for smartphones. Some of these phones with the underlying 1anm chips are expected to be available in the second half of this year.
Besides using 1anm in LPDDR4 for use inside smartphones, SK hynix also hopes to utilize the process in its DDR5 products too that it announced last year. You can find more details here.
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