Samsung has begun mass producing the second generation of its 10-nanometer 8GB DDR4 DRAM. The Korean tech giant is boasting that the new chip features the highest performance and has the best energy efficiency when compared to other 8GB DRAM chips. The company is also boasting that the chip has the smallest dimensions which will allow for more room inside of computers to cram in more components.
Gyoyoung Jin, president of Memory Business at Samsung Electronics, said:
“By developing innovative technologies in DRAM circuit design and process, we have broken through what has been a major barrier for DRAM scalability. Through a rapid ramp-up of the 2nd-generation 10nm-class DRAM, we will expand our overall 10-nm DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness.”
The new chip offers better energy efficiency and performance than the company's first generation chip. With regards to energy efficiency, the new chip is claimed to be improved by 15 percent, which should see batteries on laptops last just that bit longer. In terms of performance, Samsung says that the new chip has been improved by 10 percent on the last iteration and can operate at 3,600 Mbps per pin, compared to the first-gen 3,200 Mbps.
Going forward, the firm will rapidly increase increase the production of the chip, but will also continue to manufacture the first generation chip in order to meet the demand for DRAM in systems worldwide.